2007 No.211 Special Edition on Devices
Development of World’s First 13-bit Source Driver with 500 Mbps/Pair High-speed Interface and Creation of Demonstration Panel with Independent RGB Gamma Controls [182KB]
Picture quality requirements are becoming more stringent in a variety of aspects, with the rapid conversion of LCD television sets into Full-Hivision sets. This is a report on the development of a technology for individently controlling the gamma characteristics of the three primary colors, RGB, in order to respond to future demand for picture quality and to comply with digital cinema standard displays, including the results from the development of a demonstration panel.
Naoya Kimura, Shuji Furuichi
Organic Light Emitting Diode (OLED) displays are increasingly becoming the focal point of attention as they are more broadly implemented in mobile devices, including automotive components and their upcoming commercialization in television sets is about to be announced. This paper describes the development of elemental technologies required of the OLED driver intended for implementation on automotive components and OKI’s efforts to reduce electromagnetic interference (EMI), followed by a summary of the single chip OLED driver include controller developed by OKI.
A 32 Mbit Single Data Rate (SDR) Synchronous Dynamic Random Access Memory (SDRAM) has been developed by Oki as an easy-to-use memory with improved ease for embedding into a System in Package (SiP), with optimized specifications for consumer applications.
Noriyuki Miura, Tadashi Chiba, Hiroyuki Yamada, Shunsuke Baba
The ultra-violet (UV) sensor IC, “ML8511”, which provides analog voltage output without optical filters, was developed using the SOI-CMOS technology. The ML8511 features the capability to reduce fluctuations in the sensitivity of a sensor with a peripheral circuit on the same chip.
Yasunori Ogawa, Takayuki Izumi
Oki developed a lithium niobate (LN) modulator driver with a built-in bias inductor intended for application in 10 Gbit/s long-distance optical communication systems. A high-speed operation of 11.3 Gbit/s was realized using a high breakdown voltage Pseudomorphic High Electron Mobility Transistor (PHEMT) and by optimizing the circuit configuration. We were also successful in realizing high output amplitude characteristics with the output amplitude of 6 Vpp, while miniaturizing the IC.
Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) Technology for High Gain and Highly Efficient Power Amplifiers [228KB]
Shinichi Hoshi, Hideyuki Okita, Yoshiaki Morino, Masanori Itoh
A high gain and extremely efficient power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) with its device technologies and superior electrical characteristics is introduced. The GaN-HEMT was developed for the next generation wireless base station.